Part PE8810B
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer ChipSourceTek
Size 765.23 KB
ChipSourceTek
PE8810B

Overview

The PE8810B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

  • VDS = 18V, ID = 7A RDS(ON) < 18mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 19mΩ @ VGS=3.8V RDS(ON) < 22mΩ @ VGS=3.1V RDS(ON) < 25mΩ @ VGS=2.5V ESD Rating: 4000V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package k Application e
  • PWM applications
  • Load switch Marking and pin assignment rceT TSSOP-8 ou Absolute Maximum Ratings (TA=25℃ unless otherwise noted) S Drain-Source Voltage Parameter ip Gate-Source Voltage Drain Current-Continuous h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol