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PE8810B Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: ChipSourceTek

Download the PE8810B datasheet PDF. This datasheet also includes the PE8810B-ChipSourceTek variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (PE8810B-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE8810B
Manufacturer ChipSourceTek
File Size 765.23 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8810B Datasheet

General Description

The PE8810B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Overview

N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS = 18V, ID = 7A RDS(ON) < 18mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 19mΩ @ VGS=3.8V RDS(ON) < 22mΩ @ VGS=3.1V RDS(ON) < 25mΩ @ VGS=2.5V ESD Rating: 4000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired 技.
  • Surface Mount Package k.

📁 Similar Datasheet

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