PE8810B Datasheet | ChipSourceTek

N-Channel Enhancement Mode Power MOSFET Description The PE8810B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features - VDS = 18V, ID = 7A RDS(ON) < 18mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 19mΩ @ VGS=3.8V RDS(ON) < 22mΩ @ VGS=3.1V RDS(ON) < 25mΩ @ VGS=2.5V ESD Rating: 4000V HBM - High Power and current handing capability - Lead free product is acquired 技 - Surface Mount Package k Application 科 e - PWM applications - Load switch Marking and pin assignment 源特 rceT TSSOP-8 矽 ou...