PE8813 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.5V RDS(ON) =11mΩ@ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is a.
It is ESD protested.
General Features
* VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.5V RDS(ON) =11mΩ@ VGS=4.5V ESD Ratin.
Image gallery
Download