PE8910 - N-Channel Enhancement Mode Power MOSFET

Product Overview

semi one

Part number	PE8910
Manufacturer	semi one
File Size	211.54 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8910 Datasheet
Additional preview pages of the PE8910 datasheet.

The PE8910 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

VDS = 30V,ID =11A RDS(ON) < 10m Ω@ V GS=10V RDS(ON) < 14m Ω@ VGS=4.5V ESD Rating: 2000V HBM.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram Marking and pin assignment.

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Published: Dec 3, 2018 |