ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor

ACE Technology

Description

ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection .
The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: ACE2600B
Manufacturer: ACE Technology
File Size: 446.47 KB
Datasheet: ACE2600B-ACETechnology.pdf
Description: Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* VDS(V)=20V
* ID=6A (VGS=4.5V)
* RDS(ON)＜22mΩ (VGS=4.5V)
* RDS(ON)＜26mΩ (VGS=2.5V)
* RDS(ON)＜34mΩ (VGS=1.8V)
* ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)
* AC TA=25 OC TA

ACE2600B Distributors

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ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor ACE Technology

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