ACE2600B - Dual N-Channel Enhancement Mode Field Effect Transistor

Product Overview

ACE Technology

Part number	ACE2600B
Manufacturer	ACE Technology
File Size	446.47 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	ACE2600B Datasheet
Additional preview pages of the ACE2600B datasheet.

The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS(V)=20V.
ID=6A (VGS=4.5V).
RDS(ON)＜22mΩ (VGS=4.5V).
RDS(ON)＜26mΩ (VGS=2.5V).
RDS(ON)＜34mΩ (VGS=1.8V).
ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous).
AC TA=25 OC TA=70 OC VDSS VGSS ID 20 V ±8 V 6 4.8 A Drain Current (Pulse).
B IDM 30 Power Dissipation TA=25 OC TA=70 OC PD 1.3 W 0.8 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Pack.

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Published: Apr 1, 2016 |