ACE2600B Datasheet, Transistor, ACE Technology

ACE2600B Features

  • Transistor
  • VDS(V)=20V
  • ID=6A (VGS=4.5V)
  • RDS(ON)<22mΩ (VGS=4.5V)
  • RDS(ON)<26mΩ (VGS=2.5V)
  • RDS(ON)<34mΩ (VGS=1.8V)
  • ESD Protected: 2000V Abs

PDF File Details

Part number:

ACE2600B

Manufacturer:

ACE Technology

File Size:

446.47kb

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📄 Datasheet

Description:

Dual n-channel enhancement mode field effect transistor. The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

Datasheet Preview: ACE2600B 📥 Download PDF (446.47kb)
Page 2 of ACE2600B Page 3 of ACE2600B

TAGS

ACE2600B
Dual
N-Channel
Enhancement
Mode
Field
Effect
Transistor
ACE Technology

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