ACE2600B - Dual N-Channel Enhancement Mode Field Effect Transistor
ACE2600B Features
* VDS(V)=20V
* ID=6A (VGS=4.5V)
* RDS(ON)＜22mΩ (VGS=4.5V)
* RDS(ON)＜26mΩ (VGS=2.5V)
* RDS(ON)＜34mΩ (VGS=1.8V)
* ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)
* AC TA=25 OC TA
