Part number:
ACE2301
Manufacturer:
ACE Technology
File Size:
114.79 KB
Description:
P-channel enhancement mode mosfet.
* VDS=-20V RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Contin
ACE2301
ACE Technology
114.79 KB
P-channel enhancement mode mosfet.
📁 Related Datasheet
ACE2302 - N-Channel Enhancement Mode MOSFET
(ACE Technology)
..
ACE2302
.
ACE2302BBM - N-Channel MOSFET
(VBsemi)
ACE2302BBM+H
.VBsemi.
ACE2302BBM+H N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 at VGS .
ACE2302M - N-Channel MOSFET
(ACE Technology)
ACE2302M N-Channel 20-V MOSFET
Description ACE2302M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for .
ACE2303 - P-Channel Enhancement Mode MOSFET
(ACE Technology)
..
ACE2303
Technology
Description
P-Channel Enhancement Mode MOSFET
The ACE2303 is the P-Channel logic enhancement mode power fie.
ACE2304 - N-Channel Enhancement Mode MOSFET
(ACE Technology)
..
ACE2304
Technology
Description
N-Channel Enhancement Mode MOSFET
The ACE2304 is the N-Channel logic enhancement mode power fie.
ACE2305 - P-Channel Enhancement Mode MOSFET
(ACE Technology)
..
ACE2305
Technology
Description
P-Channel Enhancement Mode MOSFET
The ACE2305 is the P-Channel logic enhancement mode power fie.
ACE2308E - N-Channel MOSFET
(ACE Technology)
ACE2308E N-Channel 30-V MOSFET
Features
• Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Applications
• Power Routing .
ACE2320M - N-Channel MOSFET
(ACE Technology)
ACE2320M
N-Channel 20-V MOSFET
Description ACE2320M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for l.
