ACE2301 Datasheet - ACE Technology

ACE2301 P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited .

ACE2301 Features

* VDS=-20V RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Contin

ACE2301_ACETechnology.pdf