ACE2303 Datasheet - ACE Technology

ACE2303 P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET The ACE2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited.

ACE2303 Features

* -30V/-2.6A, RDS(ON)=130mΩ@VGS=-10V -30V/-2.0A, RDS(ON)=180mΩ@VGS=-4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current c

ACE2303_ACETechnology.pdf