ACE2305
Overview
P-Channel Enhancement Mode MOSFET The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
- -15V/-3.5A, RDS(ON)=70mΩ@VGS=-4.5V -15V/-3.0A, RDS(ON)=85mΩ@VGS=-2.5V -15V/-2.0A, RDS(ON)=105mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
