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ACE2308E N-Channel 30-V MOSFET
Features
• Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Applications
• Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
TA=25℃ TA=70℃
Pulse Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃ TA=70℃
Operating Temperature / Storage Temperature
*1 Pw ≦10 μs, Duty cycle ≦1 %
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%
Symbol Limit VDS 30 VGS ±12 3.5 ID 2.8 IDM 15 IS 1.9 1.3 PD 0.
ACE2308E Datasheet
