ACE2607B Datasheet, Transistor, ACE Technology

ACE2607B Features

• Transistor
• VDS(V)=-30V, ID=-3.5A
• RDS(ON)=52mΩ@VGS=-10V
• RDS(ON)=68mΩ@VGS=-4.5V
• High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter

PDF File Details

Part number:

ACE2607B

Manufacturer:

ACE Technology

File Size:

328.97kb

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📄 Datasheet

Description:

P-channel enhancement mode field effect transistor. ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This d

TAGS

ACE2607B

ACE Technology

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