ACE2607B Datasheet - ACE Technology

ACE2607B P-Channel Enhancement Mode Field Effect Transistor

ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are ne.

ACE2607B Features

* VDS(V)=-30V, ID=-3.5A

* RDS(ON)=52mΩ@VGS=-10V

* RDS(ON)=68mΩ@VGS=-4.5V

* High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous TA=25℃ Puls

ACE2607B-ACETechnology.pdf