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ACE2607B P-Channel Enhancement Mode Field Effect Transistor

ACE2607B Description

ACE2607B P-Channel Enhancement Mode Field Effect Transistor .
ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

ACE2607B Features

* VDS(V)=-30V, ID=-3.5A
* RDS(ON)=52mΩ@VGS=-10V
* RDS(ON)=68mΩ@VGS=-4.5V
* High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous TA=25℃ Puls

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Datasheet Details

Part number
ACE2607B
Manufacturer
ACE Technology
File Size
328.97 KB
Datasheet
ACE2607B-ACETechnology.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

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P-Channel Enhancement Mode Field Effect Transistor ACE Technology
ACE Technology ACE2607B-like datasheet