ACE2607B - P-Channel Enhancement Mode Field Effect Transistor

Product Overview

ACE Technology

Part number	ACE2607B
Manufacturer	ACE Technology
File Size	328.97 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	ACE2607B Datasheet
Additional preview pages of the ACE2607B datasheet.

ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

VDS(V)=-30V, ID=-3.5A.
RDS(ON)=52mΩ@VGS=-10V.
RDS(ON)=68mΩ@VGS=-4.5V.
High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous TA=25℃ Pulse (Note 2) ID -3.5 A -20 Power Dissipation(1) (Note 1) PD 650 mW Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-6L 1 VER 1.3 1 ACE2607B P-Channel Enhance.

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Published: Apr 1, 2016 |