Part number:
ACE2607B
Manufacturer:
ACE Technology
File Size:
328.97 KB
Description:
P-channel enhancement mode field effect transistor.
* VDS(V)=-30V, ID=-3.5A
* RDS(ON)=52mΩ@VGS=-10V
* RDS(ON)=68mΩ@VGS=-4.5V
* High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous TA=25℃ Puls
ACE2607B Datasheet (328.97 KB)
ACE2607B
ACE Technology
328.97 KB
P-channel enhancement mode field effect transistor.
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PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 at VGS .
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