ADM100N10 N-Channel MOSFET

ADM100N10 Description

ADV ADM100N10 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 100A RDS(ON) (mΩ) 13m.
The ADM100N10 uses advanced trench technology and design to provide excellent charge.

ADM100N10 Features

* Special process technology for high ESD capability
* High density cell design for ultra low RDS(ON)
* 100% EAS Guaranteed
* Optimized V(BR)DSS Ruggedness

ADM100N10 Applications

* RDS(ON) with low gate Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC =25°C Mounte

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Datasheet Details

Part number: ADM100N10
Manufacturer: ADV
File Size: 0.99 MB
Datasheet: ADM100N10-ADV.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET ADV

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