ADM100N10 Datasheet - ADV

ADM100N10, N-Channel MOSFET

ADV ADM100N10 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 100A RDS(ON) (mΩ) 13m.
The ADM100N10 uses advanced trench technology and design to provide excellent charge.

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Datasheet Details

Part number:

ADM100N10

Manufacturer:

ADV

File Size:

0.99 MB

Description:

N-Channel MOSFET

Features

* Special process technology for high ESD capability
* High density cell design for ultra low RDS(ON)
* 100% EAS Guaranteed
* Optimized V(BR)DSS Ruggedness

Applications

* RDS(ON) with low gate Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC =25°C Mounte

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ADM100N10 N-Channel MOSFET ADV

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