ADM50N06 N-Channel MOSFET

Description

ADV ADM50N06 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 50A RDS(ON) (mΩ) 20mΩ .
The ADM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: ADM50N06
Manufacturer: ADV
File Size: 953.28 KB
Datasheet: ADM50N06-ADV.pdf
Description: N-Channel MOSFET

Applications

* Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC =25°C Mounted on Large Heat Sink ID

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ADM50N06 N-Channel MOSFET ADV

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