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ADM57N10

N-Channel MOSFET

ADM57N10 Features

* Low Gate Charge for Fast Switching Application

* Low RDS(ON) to Minimize Conductive Loss

* 100% EAS Guaranteed

* Optimized V(BR)DSS Ruggedness

* Lead-Free,RoHS Compliant 1  2  3  Description: The ADM57N10 uses advanced trench technology and design to provide excellent RDS(ON

ADM57N10 General Description

The ADM57N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-S.

ADM57N10 Datasheet (887.86 KB)

Preview of ADM57N10 PDF

Datasheet Details

Part number:

ADM57N10

Manufacturer:

ADV

File Size:

887.86 KB

Description:

N-channel mosfet.
                        ADV     ADM57N10  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 57A RDS(ON) (mΩ) 17mΩ .

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TAGS

ADM57N10 N-Channel MOSFET ADV

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