ADM57N10 N-Channel MOSFET

Description

ADV ADM57N10 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 57A RDS(ON) (mΩ) 17mΩ .
The ADM57N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: ADM57N10
Manufacturer: ADV
File Size: 887.86 KB
Datasheet: ADM57N10-ADV.pdf
Description: N-Channel MOSFET

Applications

* Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC =25°C Mounted on Large Heat Sink ID

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ADM57N10 N-Channel MOSFET ADV

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