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SSC2314GS6A Datasheet - AFSEMI

SSC2314GS6A N-Channel Enhancement Mode MOSFET

Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line po.

SSC2314GS6A Datasheet (107.19 KB)

Preview of SSC2314GS6A PDF

Datasheet Details

Part number:

SSC2314GS6A

Manufacturer:

AFSEMI

File Size:

107.19 KB

Description:

N-channel enhancement mode mosfet.

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SSC2314GS6A N-Channel Enhancement Mode MOSFET AFSEMI

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