SSC2314GS6A N-Channel Enhancement Mode MOSFET

Description

SSC2314GS6A N-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

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Datasheet Specifications

Part number: SSC2314GS6A
Manufacturer: AFSEMI
File Size: 107.19 KB
Datasheet: SSC2314GS6A-AFSEMI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* VDS VGS RDSon TYP 22mR@4V5 ID

Applications

* Load Switch
* Portable Devices
* DCDC Conversion 20V ±8V 25mR@2V5 32mR@1V8 5A
* Pin configuration

SSC2314GS6A Distributors

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SSC2314GS6A N-Channel Enhancement Mode MOSFET AFSEMI

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