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SSC8066GS6 N-Channel Enhancement Mode MOSFET

SSC8066GS6 Description

SSC8066GS6 N-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

SSC8066GS6 Features

* VDS 60V VGS ±20V RDSon TYP 45mR@10V 80mR@4V5 ID 3A

SSC8066GS6 Applications

* Load Switch
* Portable Devices
* DCDC Conversion
* Pin Configuration

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Datasheet Details

Part number
SSC8066GS6
Manufacturer
AFSEMI
File Size
157.81 KB
Datasheet
SSC8066GS6-AFSEMI.pdf
Description
N-Channel Enhancement Mode MOSFET

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📌 All Tags

N-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8066GS6-like datasheet