Part number:
SSC80A2GT1
Manufacturer:
AFSEMI
File Size:
157.09 KB
Description:
N-channel enhancement mode mosfet.
* VDS VGS 100V ±20V RDSon TYP 129mR@10V 130mR@4V5 ID 5A
* General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications
* Load Switch
SSC80A2GT1 Datasheet (157.09 KB)
SSC80A2GT1
AFSEMI
157.09 KB
N-channel enhancement mode mosfet.
📁 Related Datasheet
SSC80A2GT8 N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8013GS6 P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8013GSB P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8015GS6 P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8019GN2 P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8020GS6 N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8020GS8 N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8020GS9 N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8022GS6 N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8023GS6 P-Channel Enhancement Mode MOSFET (AFSEMI)