SSC8124GS6B N-Channel Enhancement Mode MOSFET

Description

SSC8124GS6B N-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

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Datasheet Specifications

Part number: SSC8124GS6B
Manufacturer: AFSEMI
File Size: 145.04 KB
Datasheet: SSC8124GS6B-AFSEMI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* VDS VGS RDSon TYP 22mR@4V5 ID

Applications

* Load Switch
* Portable Devices
* DCDC Conversion 20V ±12V 25mR@2V5 32mR@1V8 6A
* Pin configuration

SSC8124GS6B Distributors

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SSC8124GS6B N-Channel Enhancement Mode MOSFET AFSEMI

AFSEMI SSC8124GS6B-like datasheet