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SSC8124GS6B N-Channel Enhancement Mode MOSFET

SSC8124GS6B Description

SSC8124GS6B N-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

SSC8124GS6B Features

* VDS VGS RDSon TYP 22mR@4V5 ID

SSC8124GS6B Applications

* Load Switch
* Portable Devices
* DCDC Conversion 20V ±12V 25mR@2V5 32mR@1V8 6A
* Pin configuration

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Datasheet Details

Part number
SSC8124GS6B
Manufacturer
AFSEMI
File Size
145.04 KB
Datasheet
SSC8124GS6B-AFSEMI.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET AFSEMI
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