SSC8120GS6 N-Channel Enhancement Mode MOSFET

Description

SSC8120GS6 N-Channel Enhancement Mode MOSFET * .
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .

📥 Download Datasheet

SSC8120GS6 Datasheet Preview — Preview of SSC8120GS6 PDF

Datasheet Specifications

Part number: SSC8120GS6
Manufacturer: AFSEMI
File Size: 170.12 KB
Datasheet: SSC8120GS6-AFSEMI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.2A ESD 1.2K

Applications

* especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
* Applications
* Load Switch
* Portable Devices
* DCDC Conversion
* Pin configuration Top View
* Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://www. afsemi. com 1/4 Analog

SSC8120GS6 Distributors

📁 Related Datasheet

SSC8033GS3 SSC8035GS6 SSC-AM101 SSC-AWT722 SSC-CMX2 SSC-D3232SL-88

📌 All Tags

SSC8120GS6 N-Channel Enhancement Mode MOSFET AFSEMI

AFSEMI SSC8120GS6-like datasheet