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SSC8120GS6 N-Channel Enhancement Mode MOSFET

SSC8120GS6 Description

SSC8120GS6 N-Channel Enhancement Mode MOSFET * .
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .

SSC8120GS6 Features

* VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.2A ESD 1.2K

SSC8120GS6 Applications

* especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
* Applications
* Load Switch
* Portable Devices
* DCDC Conversion
* Pin configuration Top View
* Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://www. afsemi. com 1/4 Analog

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Datasheet Details

Part number
SSC8120GS6
Manufacturer
AFSEMI
File Size
170.12 KB
Datasheet
SSC8120GS6-AFSEMI.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8120GS6-like datasheet