Part number:
SSC8120GS6
Manufacturer:
AFSEMI
File Size:
170.12 KB
Description:
N-channel enhancement mode mosfet.
* VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.2A ESD 1.2K
* General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for ba
SSC8120GS6 Datasheet (170.12 KB)
SSC8120GS6
AFSEMI
170.12 KB
N-channel enhancement mode mosfet.
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