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SSC8121GN1 P-Channel Enhancement Mode MOSFET

SSC8121GN1 Description

SSC8121GN1 P-Channel Enhancement Mode MOSFET * .
This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

SSC8121GN1 Features

* VDS VGS RDSon TYP ID 150mR@-4V5 -20V ±8V 190mR@-2V5 -1.0A 255mR@-1V8

SSC8121GN1 Applications

* such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
* Package Information
* Applications
* Load Switch

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Datasheet Details

Part number
SSC8121GN1
Manufacturer
AFSEMI
File Size
141.25 KB
Datasheet
SSC8121GN1-AFSEMI.pdf
Description
P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8121GN1-like datasheet