Part number:
SSC8121GN1
Manufacturer:
AFSEMI
File Size:
141.25 KB
Description:
P-channel enhancement mode mosfet.
* VDS VGS RDSon TYP ID 150mR@-4V5 -20V ±8V 190mR@-2V5 -1.0A 255mR@-1V8
* General Description This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as por
SSC8121GN1 Datasheet (141.25 KB)
SSC8121GN1
AFSEMI
141.25 KB
P-channel enhancement mode mosfet.
📁 Related Datasheet
SSC8120GN1 N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8120GS6 N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8120GS8 N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8120GS9 N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8124GS6B N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8124GSB N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8124GT3 N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8124GT8 N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8125GS6 P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8125GS6A P-Channel Enhancement Mode MOSFET (AFSEMI)