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SSC8120GS8 N-Channel Enhancement Mode MOSFET

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Description

SSC8120GS8 N-Channel Enhancement Mode MOSFET * .
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .

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Datasheet Specifications

Part number
SSC8120GS8
Manufacturer
AFSEMI
File Size
252.20 KB
Datasheet
SSC8120GS8-AFSEMI.pdf
Description
N-Channel Enhancement Mode MOSFET

Features

* VDS VGS RDSon TYP ID ESD 310mR@4V5 20V ±12V 490mR@2V5 0.8A 1.2K 850mR@1V8

Applications

* especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
* Package Information Applications
* Replace Digital Transistor
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers Pin Configuration T

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