SSC8120GS9 N-Channel Enhancement Mode MOSFET

Description

SSC8120GS9 N-Channel Enhancement Mode MOSFET * .
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .

📥 Download Datasheet

SSC8120GS9 Datasheet Preview — Preview of SSC8120GS9 PDF

Datasheet Specifications

Part number: SSC8120GS9
Manufacturer: AFSEMI
File Size: 268.61 KB
Datasheet: SSC8120GS9-AFSEMI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* VDS VGS RDSon TYP ID ESD 300mR@4V5 20V ±12V 440mR@2V5 0.75A 1.2K 800mR@1V8

Applications

* especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications
* Replace Digital Transistor
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers Pin Configuration Top View
* Package Info

SSC8120GS9 Distributors

📁 Related Datasheet

SSC8033GS3 SSC8035GS6 SSC-AM101 SSC-AWT722 SSC-CMX2 SSC-D3232SL-88

📌 All Tags

SSC8120GS9 N-Channel Enhancement Mode MOSFET AFSEMI

AFSEMI SSC8120GS9-like datasheet