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SSC8120GS9 N-Channel Enhancement Mode MOSFET

SSC8120GS9 Description

SSC8120GS9 N-Channel Enhancement Mode MOSFET * .
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .

SSC8120GS9 Features

* VDS VGS RDSon TYP ID ESD 300mR@4V5 20V ±12V 440mR@2V5 0.75A 1.2K 800mR@1V8

SSC8120GS9 Applications

* especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications
* Replace Digital Transistor
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers Pin Configuration Top View
* Package Info

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Datasheet Details

Part number
SSC8120GS9
Manufacturer
AFSEMI
File Size
268.61 KB
Datasheet
SSC8120GS9-AFSEMI.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8120GS9-like datasheet