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SSC8120GN1 N-Channel Enhancement Mode MOSFET

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Description

SSC8120GN1 N-Channel Enhancement Mode MOSFET * .
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .

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Datasheet Specifications

Part number
SSC8120GN1
Manufacturer
AFSEMI
File Size
192.76 KB
Datasheet
SSC8120GN1-AFSEMI.pdf
Description
N-Channel Enhancement Mode MOSFET

Features

* VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 0.7A ESD 1.2K

Applications

* especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
* Applications
* Load Switch
* Portable Devices
* DCDC Conversion
* Pin configuration bottom View
* Package Information SSC-1V0 DFN1006 1/5 http://www. afsemi. com

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