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SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET

SSC8313GS1 Description

SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET * .
Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistan.

SSC8313GS1 Features

* VDS VGS RDSon TYP 38mR@-4V5 ID

SSC8313GS1 Applications

* Load Switch
* Portable Devices
* DCDC conversion -12V ±8V 47mR@-2V5 -6A 61mR@-1V8
* Pin Configuration

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Datasheet Details

Part number
SSC8313GS1
Manufacturer
AFSEMI
File Size
197.21 KB
Datasheet
SSC8313GS1-AFSEMI.pdf
Description
Dual P-Channel Enhancement Mode MOSFET

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Dual P-Channel Enhancement Mode MOSFET AFSEMI
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