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SSC8313GS1 Datasheet - AFSEMI

SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET

Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and S1.

SSC8313GS1-AFSEMI.pdf

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Datasheet Details

Part number:

SSC8313GS1

Manufacturer:

AFSEMI

File Size:

197.21 KB

Description:

Dual p-channel enhancement mode mosfet.

SSC8313GS1 Distributor

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SSC8313GS1 SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET AFSEMI