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SSC8313GS1

Dual P-Channel Enhancement Mode MOSFET

SSC8313GS1 Features

* VDS VGS RDSon TYP 38mR@-4V5 ID

* Applications

* Load Switch

* Portable Devices

* DCDC conversion -12V ±8V 47mR@-2V5 -6A 61mR@-1V8

* Pin Configuration

* General Description Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, wh

SSC8313GS1 General Description

Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and S1.

SSC8313GS1 Datasheet (197.21 KB)

Preview of SSC8313GS1 PDF

Datasheet Details

Part number:

SSC8313GS1

Manufacturer:

AFSEMI

File Size:

197.21 KB

Description:

Dual p-channel enhancement mode mosfet.

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SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET AFSEMI

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