SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET

Description

SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET * .
Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistan.

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Datasheet Specifications

Part number: SSC8313GS1
Manufacturer: AFSEMI
File Size: 197.21 KB
Datasheet: SSC8313GS1-AFSEMI.pdf
Description: Dual P-Channel Enhancement Mode MOSFET

Features

* VDS VGS RDSon TYP 38mR@-4V5 ID

Applications

* Load Switch
* Portable Devices
* DCDC conversion -12V ±8V 47mR@-2V5 -6A 61mR@-1V8
* Pin Configuration

SSC8313GS1 Distributors

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SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET AFSEMI

AFSEMI SSC8313GS1-like datasheet