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SSC8325GS1 Dual P-Channel Enhancement Mode MOSFET

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Description

SSC8325GS1 Dual P-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

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Datasheet Specifications

Part number
SSC8325GS1
Manufacturer
AFSEMI
File Size
198.90 KB
Datasheet
SSC8325GS1-AFSEMI.pdf
Description
Dual P-Channel Enhancement Mode MOSFET

Features

* VDS VGS RDSon TYP 38mR@-4V5 ID ESD

Applications

* Load Switch
* Portable Devices
* DCDC conversion -20V ±8V 47mR@-2V5 61mR@-1V8 -6A 3KV
* Pin Configuration

SSC8325GS1 Distributors

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