Datasheet Details
| Part number | SSC8329GS1 | 
|---|---|
| Manufacturer | AFSEMI | 
| File Size | 594.70 KB | 
| Description | Dual P-Channel Enhancement Mode MOSFET | 
| Datasheet | 
        
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| Part number | SSC8329GS1 | 
|---|---|
| Manufacturer | AFSEMI | 
| File Size | 594.70 KB | 
| Description | Dual P-Channel Enhancement Mode MOSFET | 
| Datasheet | 
        
           | 
    
This device is produced with high cell density, DMOS Top View D1 D1 D2 trench technology, which is especially used to minimize on-state resistance.This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.S1 G1 S2 Package Information D2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8329GS1 Absolute Maximum Ratings @TA = 25℃ unl
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