SSC8329GS1 Dual P-Channel Enhancement Mode MOSFET

Description

SSC8329GS1 Dual P-Channel Enhancement Mode MOSFET * .
This device is produced with high cell density, DMOS Top View D1 D1 D2 trench technology, which is especially used to minimize on-state resistance.

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Datasheet Specifications

Part number: SSC8329GS1
Manufacturer: AFSEMI
File Size: 594.70 KB
Datasheet: SSC8329GS1-AFSEMI.pdf
Description: Dual P-Channel Enhancement Mode MOSFET

Features

* VDS -20V VGS ±12V RDSon TYP 13mR@-4V5V 16mR@-2V5 ID -18A

Applications

* Load Switch
* DCDC conversion
* NB battery
* Pin configuration

SSC8329GS1 Distributors

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SSC8329GS1 Dual P-Channel Enhancement Mode MOSFET AFSEMI

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