SSC8329GS1 Datasheet - AFSEMI

SSC8329GS1, Dual P-Channel Enhancement Mode MOSFET

SSC8329GS1 Dual P-Channel Enhancement Mode MOSFET * .
This device is produced with high cell density, DMOS Top View D1 D1 D2 trench technology, which is especially used to minimize on-state resistance.

Features

* VDS -20V VGS ±12V RDSon TYP 13mR@-4V5V 16mR@-2V5 ID -18A

Applications

* Load Switch
* DCDC conversion
* NB battery
* Pin configuration

SSC8329GS1-AFSEMI.pdf

SSC8329GS1 Datasheet Preview — Preview of SSC8329GS1 PDF

Datasheet Details

Part number:

SSC8329GS1

Manufacturer:

AFSEMI

File Size:

594.70 KB

Description:

Dual P-Channel Enhancement Mode MOSFET

SSC8329GS1 Distributors

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SSC8329GS1 Dual P-Channel Enhancement Mode MOSFET AFSEMI

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