SSC8326GS1V1.0 Dual N-Channel Enhancement Mode MOSFET

Description

SSC8326GS1 Dual N-Channel Enhancement Mode MOSFET * .
This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and oper.

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Datasheet Specifications

Part number: SSC8326GS1V1.0
Manufacturer: AFSEMI
File Size: 227.59 KB
Datasheet: SSC8326GS1V1.0-AFSEMI.pdf
Description: Dual N-Channel Enhancement Mode MOSFET

Features

* VDS VGS 20V ±12V RDSon TYP 20mR@4V5 22mR@3V8 24mR@2V5 ID 6A

Applications

* Package Information Applications
* Li-ion battery;
* Load swich;
* Battery charger Pin configuration Top View D1 D1 D2 D2 S1 G1 S2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 1/5 http://www. afsemi. com
* Order information Device Package SSC8326GS1 Marking Shipping SSC8326

SSC8326GS1V1.0 Distributors

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SSC8326GS1V1.0 Dual N-Channel Enhancement Mode MOSFET AFSEMI

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