SSC8330GQ4 Datasheet - AFSEMI

SSC8330GQ4, Dual N-Channel Enhancement Mode MOSFET

SSC8330GQ4 Dual Asymmetric N-Channel Enhancement Mode MOSFET * .
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Applications

* Load Switch VDS VGS RDSon TYP ID
* Isolated DC/DC Converters 9.5 mR@10V Q1 30V ±20V 15A 12.5mR@4V5
* DCDC conversion in Computing 8 mR@10V
* Pin configuration Q2 30V ±20V 18A 10mR@4V5 Bottom View Top View

SSC8330GQ4-AFSEMI.pdf