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SSC8330GQ4 Dual N-Channel Enhancement Mode MOSFET

SSC8330GQ4 Description

SSC8330GQ4 Dual Asymmetric N-Channel Enhancement Mode MOSFET * .
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

SSC8330GQ4 Applications

* Load Switch VDS VGS RDSon TYP ID
* Isolated DC/DC Converters 9.5 mR@10V Q1 30V ±20V 15A 12.5mR@4V5
* DCDC conversion in Computing 8 mR@10V
* Pin configuration Q2 30V ±20V 18A 10mR@4V5 Bottom View Top View

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Datasheet Details

Part number
SSC8330GQ4
Manufacturer
AFSEMI
File Size
1.62 MB
Datasheet
SSC8330GQ4-AFSEMI.pdf
Description
Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8330GQ4-like datasheet