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SSC8336GS1 Dual N-Channel Enhancement Mode MOSFET

SSC8336GS1 Description

SSC8336GS1 Dual N-Channel Enhancement Mode MOSFET * .
Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minim.

SSC8336GS1 Applications

* Inverter; VDS VGS RDSon TYP ID 30V ±20V 16mR@10V 20mR@4V5 9A
* Pin configuration

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Datasheet Details

Part number
SSC8336GS1
Manufacturer
AFSEMI
File Size
341.97 KB
Datasheet
SSC8336GS1-AFSEMI.pdf
Description
Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel Enhancement Mode MOSFET AFSEMI
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