SSC8336GS1 Dual N-Channel Enhancement Mode MOSFET

Description

SSC8336GS1 Dual N-Channel Enhancement Mode MOSFET * .
Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minim.

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Datasheet Specifications

Part number: SSC8336GS1
Manufacturer: AFSEMI
File Size: 341.97 KB
Datasheet: SSC8336GS1-AFSEMI.pdf
Description: Dual N-Channel Enhancement Mode MOSFET

Applications

* Inverter; VDS VGS RDSon TYP ID 30V ±20V 16mR@10V 20mR@4V5 9A
* Pin configuration

SSC8336GS1 Distributors

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SSC8336GS1 Dual N-Channel Enhancement Mode MOSFET AFSEMI

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