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SSC8336GS1

Dual N-Channel Enhancement Mode MOSFET

SSC8336GS1 Features

* Applications

* Inverter; VDS VGS RDSon TYP ID 30V ±20V 16mR@10V 20mR@4V5 9A

* Pin configuration

* General Description Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize o

SSC8336GS1 General Description

Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inv.

SSC8336GS1 Datasheet (341.97 KB)

Preview of SSC8336GS1 PDF

Datasheet Details

Part number:

SSC8336GS1

Manufacturer:

AFSEMI

File Size:

341.97 KB

Description:

Dual n-channel enhancement mode mosfet.

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TAGS

SSC8336GS1 Dual N-Channel Enhancement Mode MOSFET AFSEMI

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