SSC8339GS1 Dual P-Channel Enhancement Mode MOSFET

Description

SSC8339GS1 Dual P-Channel Enhancement Mode MOSFET * .
Top View D1 D1 D2 D2 This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resista.

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Datasheet Specifications

Part number: SSC8339GS1
Manufacturer: AFSEMI
File Size: 320.12 KB
Datasheet: SSC8339GS1-AFSEMI.pdf
Description: Dual P-Channel Enhancement Mode MOSFET

Features

* VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A

Applications

* Load Switch
* DCDC conversion
* NB battery
* Pin configuration

SSC8339GS1 Distributors

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SSC8339GS1 Dual P-Channel Enhancement Mode MOSFET AFSEMI

AFSEMI SSC8339GS1-like datasheet