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SSC8339GS1 Datasheet - AFSEMI

SSC8339GS1 - Dual P-Channel Enhancement Mode MOSFET

Top View D1 D1 D2 D2 This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load swit.

SSC8339GS1-AFSEMI.pdf

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Datasheet Details

Part number:

SSC8339GS1

Manufacturer:

AFSEMI

File Size:

320.12 KB

Description:

Dual p-channel enhancement mode mosfet.

SSC8339GS1 Distributor

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SSC8339GS1 Dual P-Channel Enhancement Mode MOSFET AFSEMI