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SSC8362GS1

Dual N-Channel Enhancement Mode MOSFET

SSC8362GS1 General Description

This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems. .

SSC8362GS1 Datasheet (235.89 KB)

Preview of SSC8362GS1 PDF

Datasheet Details

Part number:

SSC8362GS1

Manufacturer:

AFSEMI

File Size:

235.89 KB

Description:

Dual n-channel enhancement mode mosfet.

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SSC8362GS1 Dual N-Channel Enhancement Mode MOSFET AFSEMI

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