SSC8362GS1 Datasheet - AFSEMI

SSC8362GS1, Dual N-Channel Enhancement Mode MOSFET

SSC8362GS1 Dual N-Channel Enhancement Mode MOSFET * .
This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state.

Features

* VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 6.5A

Applications

* Inverter;
* Pin configuration Top View ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www. afsemi. com 1/5 Analog Future SSC8362GS1
* Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Total Power

SSC8362GS1-AFSEMI.pdf