AGM1010A-E Datasheet - AGMSEMI

AGM1010A-E MOSFET

AGM1010A-E Features

* BVDSS RDSON ID 100V 5.8mΩ 90A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching PDFN5

* 6 Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous

Datasheet Details

AGM1010A-E

AGMSEMI

553.84 KB

Mosfet.

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