AGM1010A2 Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 100V 7.8mΩ 74A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching PDFN5

* 6 Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous

AGM1010A2

AGMSEMI

431.83 KB

Mosfet.

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AGM1010A2 MOSFET AGMSEMI

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