AGM1030MBP Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 100V 26mΩ 20A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching PDFN3.3

* 3.3 Pin Configuration

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Ap

AGM1030MBP

AGMSEMI

1.45 MB

Mosfet.

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AGM1030MBP MOSFET AGMSEMI

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