AGM10N65F Datasheet - AGMSEMI

AGM10N65F MOSFET

AGM10N65F Features

* BVDSS RDSON ID 650V 0.98Ω 10A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-220F Pin Configuration

* Low Thermal resistance

* Application

* Electronic Ballast

* Electronic Transf

Datasheet Details

AGM10N65F

AGMSEMI

536.13 KB

Mosfet.

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