AGM14N10AP Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 100V 12mΩ 40A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching PDFN3.3

* 3.3 Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchron

AGM14N10AP

AGMSEMI

901.66 KB

Mosfet.

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