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AGM14N10AP MOSFET

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Description

AGM14N10AP * General .
The AGM14N10AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number
AGM14N10AP
Manufacturer
AGMSEMI
File Size
901.66 KB
Datasheet
AGM14N10AP-AGMSEMI.pdf
Description
MOSFET

Features

* BVDSS RDSON ID 100V 12mΩ 40A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching PDFN3.3
* 3.3 Pin Configuration
* Low Thermal resistance

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