Part number:
AGM15N10D
Manufacturer:
AGMSEMI
File Size:
347.84 KB
Description:
Mosfet.
* BVDSS RDSON ID 100V 85mΩ 15A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance TO-252 Pin Configuration D
* Application
* MB/VGA Vcore
* SMPS 2nd Synchronous Rect
AGM15N10D Datasheet (347.84 KB)
AGM15N10D
AGMSEMI
347.84 KB
Mosfet.
📁 Related Datasheet
AGM15N10D-G - MOSFET
(AGMSEMI)
AGM15N10D-G
● General Description
The AGM15N10D-G bines advanced trench MOSFET technology with a low resistance package to provide extremely low R.
AGM150P10AP - MOSFET
(AGMSEMI)
● General Description
The AGM150P10AP bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This.
AGM1532A - LCD MODULE
(AZ Displays)
AZ Displays, Inc.
AGM1532A
AZ Displays, Inc.
AZ Displays, Inc.
AZ Displays, Inc.
AZ Displays, Inc.
AZ Displays, Inc.
AZ Displays, Inc.
AZ Displ.
AGM15P13E - MOSFET
(AGMSEMI)
AGM15P13E
● General Description
The AGM15P13E bines advanced trench MOSFET
technology with a low resistance package to provide extremely low RDS(O.
AGM15P22AS - MOSFET
(AGMSEMI)
AGM15P22AS
● General Description
The AGM15P22AS bines advanced trench MOSFET
technology with a low resistance package to provide extremely low RDS.
AGM15T03LL - MOSFET
(AGMSEMI)
AGM15T03LL
● General Description
The AGM15T03LL bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.
AGM15T06C - MOSFET
(AGMSEMI)
AGM15T06C
● General Description
The AGM15T06C bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.
AGM15T06F - MOSFET
(AGMSEMI)
AGM15T06F
● General Description
The AGM15T06F bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.