Part number:
AGM15N10D-G
Manufacturer:
AGMSEMI
File Size:
2.07 MB
Description:
Mosfet.
AGM15N10D-G Datasheet (2.07 MB)
* Advance high cell density Trench technology TO-252 Pin Configuration
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching D
* Low Thermal resistance
* Application
* MB/VGA Vcore
* SMPS 2nd Synchronous Rectifier
* POL application DS
AGM15N10D-G Datasheet (2.07 MB)
AGM15N10D-G
AGMSEMI
2.07 MB
Mosfet.
📁 Related Datasheet
AGM15N10D - MOSFET
(AGMSEMI)
AGM15N10D
● General Description
The AGM15N10D bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.
AGM150P10AP - MOSFET
(AGMSEMI)
● General Description
The AGM150P10AP bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This.
AGM1532A - LCD MODULE
(AZ Displays)
AZ Displays, Inc.
AGM1532A
AZ Displays, Inc.
AZ Displays, Inc.
AZ Displays, Inc.
AZ Displays, Inc.
AZ Displays, Inc.
AZ Displays, Inc.
AZ Displ.
AGM15P13E - MOSFET
(AGMSEMI)
AGM15P13E
● General Description
The AGM15P13E bines advanced trench MOSFET
technology with a low resistance package to provide extremely low RDS(O.
AGM15P22AS - MOSFET
(AGMSEMI)
AGM15P22AS
● General Description
The AGM15P22AS bines advanced trench MOSFET
technology with a low resistance package to provide extremely low RDS.
AGM15T03LL - MOSFET
(AGMSEMI)
AGM15T03LL
● General Description
The AGM15T03LL bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.
AGM15T06C - MOSFET
(AGMSEMI)
AGM15T06C
● General Description
The AGM15T06C bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.
AGM15T06F - MOSFET
(AGMSEMI)
AGM15T06F
● General Description
The AGM15T06F bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.
