AGM15N10D-G Datasheet - AGMSEMI

AGM15N10D-G MOSFET

AGM15N10D-G Features

* Advance high cell density Trench technology TO-252 Pin Configuration

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching D

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Rectifier

* POL application DS

Datasheet Details

AGM15N10D-G

AGMSEMI

2.07 MB

Mosfet.

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