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AGM15N10D-G
● General Description
The AGM15N10D-G combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON)
Product Summary
This device is ideal for load switch and battery
BVDSS
RDSON
ID
protection applications.
100V
75mΩ
16A
● Features
■ Advance high cell density Trench technology
TO-252 Pin Configuration
■ Low RDS(ON) to minimize conductive loss
■ Low Gate Charge for fast switching
D
■ Low Thermal resistance
● Application ■ MB/VGA Vcore
■ SMPS 2nd Synchronous Rectifier
■ POL application
DS G
■ BLDC Motor driver
Package Marking and Ordering Information
Device Marking
Device
AGM15N10D-G AGM15N10D-G
Device Package TO-252
Reel Size ----
Tape width ----
Quantity 2500
Table 1.
AGM15N10D-G Datasheet
