AGM16N10C Datasheet - AGMSEMI

AGM16N10C MOSFET

AGM16N10C Features

* BVDSS RDSON ID 100V 15mΩ 55A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-220 Pin Configuration

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Application

Datasheet Details

AGM16N10C

AGMSEMI

0.96 MB

Mosfet.

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