AGM16N10C Datasheet, Mosfet, AGMSEMI

✔ AGM16N10C Features

BVDSS RDSON ID 100V 15mΩ 55A
Advance high cell density Trench technology
Low RDS(ON) to minimize conductive loss
Low Gate Charge for fast switching TO-220 P

✔ AGM16N10C Application

Features BVDSS RDSON ID 100V 15mΩ 55A
Advance high cell density Trench technology
Low RDS(ON)

PDF File Details

Part number:

AGM16N10C

Manufacturer:

AGMSEMI

File Size:

0.96MB

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📄 Datasheet

Description:

Mosfet. The AGM16N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Su

📥 Download PDF (0.96MB)

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AGM16N10C MOSFET AGMSEMI