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AGM16N10C MOSFET

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Description

AGM16N10C * General .
The AGM16N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number
AGM16N10C
Manufacturer
AGMSEMI
File Size
0.96 MB
Datasheet
AGM16N10C-AGMSEMI.pdf
Description
MOSFET

Features

* BVDSS RDSON ID 100V 15mΩ 55A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching TO-220 Pin Configuration
* Low Thermal resistance
* 100% Avalanche tested
* 100% DVDS tested

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