AGM206AP Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 20V 5.0mΩ 60A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching PDFN3

* 3 Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous

AGM206AP

AGMSEMI

1.09 MB

Mosfet.

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AGM206AP MOSFET AGMSEMI

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