AGM206MAP Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 20V 4.5mΩ 25A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance

* Application

* MB/VGA Vcore PDFN3

* 3 Pin Configuration D1 D1D2D2

* SMPS 2nd Sync

AGM206MAP

AGMSEMI

698.80 KB

Mosfet.

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AGM206MAP MOSFET AGMSEMI

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