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AGM306C - MOSFET

AGM306C Description

AGM306C * General .
The AGM306C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

AGM306C Features

* BVDSS RDSON ID 30V 5.7mΩ 60A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching TO-220 Pin Configuration
* Low Thermal resistance

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Datasheet Details

Part number
AGM306C
Manufacturer
AGMSEMI
File Size
838.27 KB
Datasheet
AGM306C-AGMSEMI.pdf
Description
MOSFET

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