AGM308MBP Datasheet - AGMSEMI

AGM308MBP MOSFET

AGM308MBP Features

* BVDSS RDSON ID 30V 7.0mΩ 28A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching PDFN3

* 3 Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore D1 D1D2D2

* SMPS 2nd Sy

Datasheet Details

AGM308MBP

AGMSEMI

947.44 KB

Mosfet.

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