AGM308MN Datasheet - AGMSEMI

AGM308MN MOSFET

AGM308MN Features

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Rectifier

* POL

Datasheet Details

AGM308MN

AGMSEMI

1.06 MB

Mosfet.

AGM308MN Distributor

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AGM308MN AGM308MN MOSFET AGMSEMI