AGM311MAP - MOSFET
AGM311MAP Features
* BVDSS RDSON ID 30V 10.5mΩ 25A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching PDFN3.3
* 3.3 Pin Configuration
* Low Thermal resistance
* Application
* MB/VGA Vcore D1 D1D2D2
* SMPS 2
