Part number:
AGM311MAP
Manufacturer:
AGMSEMI
File Size:
502.55 KB
Description:
Mosfet.
AGM311MAP Datasheet (502.55 KB)
* BVDSS RDSON ID 30V 10.5mΩ 25A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching PDFN3.3
* 3.3 Pin Configuration
* Low Thermal resistance
* Application
* MB/VGA Vcore D1 D1D2D2
* SMPS 2
AGM311MAP Datasheet (502.55 KB)
AGM311MAP
AGMSEMI
502.55 KB
Mosfet.
📁 Related Datasheet
AGM310D - MOSFET
(AGMSEMI)
AGM310D
● General Description
The AGM310D bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) ..
AGM310M - MOSFET
(AGMSEMI)
AGM310M
● General Description The AGM310M bines advanced trench
Product Summary
MOSFET technology with a low resistance package
to provide extr.
AGM310MAR - MOSFET
(AGMSEMI)
● General Description The AGM310MAR bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .
This d.
AGM314MAP - MOSFET
(AGMSEMI)
AGM314MAP
● General Description The AGM314MAP bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.
AGM315MBP - MOSFET
(AGMSEMI)
● General Description
The AGM315MBP bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This d.
AGM318D - MOSFET
(AGMSEMI)
AGM318D
● General Description The AGM318D bines advanced trench
Product Summary
MOSFET technology with a low resistance package
to provide extr.
AGM318MAP - MOSFET
(AGMSEMI)
AGM318MAP
● General Description The AGM318MAP bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.
AGM318MBP - MOSFET
(AGMSEMI)
AGM318MBP
● General Description
The AGM318MBP bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.
