AGM311MAP Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 30V 10.5mΩ 25A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching PDFN3.3

* 3.3 Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore D1 D1D2D2

* SMPS 2

AGM311MAP

AGMSEMI

502.55 KB

Mosfet.

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AGM311MAP MOSFET AGMSEMI

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