AGM312M Datasheet - AGMSEMI

AGM312M - MOSFET

AGM312M Features

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Rectifier

* POL application

* BLDC Motor driver Product Summary BVDS

Datasheet Details

AGM312M

AGMSEMI

1.60 MB

Mosfet.

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