AM29LV081B Datasheet (AMD) - 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory

AM29LV081B, 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory

The Am29LV081B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes.

The device is offered in a 40-pin TSOP package.

The byte-wide (x8) data appears on DQ7 *DQ0.

This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations.

A standard

ADVANCE INFORMATION Am29LV081B 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s Optimized architecture for Miniature Card and mass storage applications s Single power supply operation Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors s Manufactured

AM29LV081B Features

* of the Am29LV081, which was manufactured using 0 . 5 µ m p r o c e s s t e c h n o l o gy. I n a d d i t i o n , t h e Am29LV081B features unlock bypass programming and in-system sector protection/unprotection. The standard device offers access times of 70, 80, 90, and 120 ns, allowing high speed mi