AM29LV081B 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory

AMD

Description

ADVANCE INFORMATION Am29LV081B 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s Optimized architect.
The Am29LV081B is an 8 Mbit, 3.

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Datasheet Specifications

Part number: AM29LV081B
Manufacturer: AMD
File Size: 39.56 KB
Datasheet: AM29LV081B_AdvancedMicroDevices.pdf
Description: 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory

Features

* of the Am29LV081, which was manufactured using 0 . 5 µ m p r o c e s s t e c h n o l o gy. I n a d d i t i o n , t h e Am29LV081B features unlock bypass programming and in-system sector protection/unprotection. The standard device offers access times of 70, 80, 90, and 120 ns, allowing high speed mi

Applications

* s Single power supply operation
* Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
* Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors s Manufactured on

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AM29LV081B Megabit 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory AMD

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