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AP4N10MSI 100V N-Channel Enhancement Mode MOSFET

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Description

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AP4N10MSI 100V N-Channel Enhancement Mode MOSFET The AP4N10MSI uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope.

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Datasheet Specifications

Part number
AP4N10MSI
Manufacturer
APM
File Size
718.94 KB
Datasheet
AP4N10MSI-APM.pdf
Description
100V N-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. 2 AP4N10MSI REV1.0 Typical Characteristics AP4N10MSI 100V N-Channel Enhancement Mode MOSFET Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Forward Characteristics of Reverse Figure 4. RDS(ON) vs. VGS 3 Figure

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100V N-Channel Enhancement Mode MOSFET APM
APM AP4N10MSI-like datasheet