AP4N65Y - 650V N-Channel Enhancement Mode MOSFET
The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and high
AP4N65Y Features
* VDS = 650V ID =4A RDS(ON) < 2.4Ω @ VGS=10V （Type：2.0Ω） Application Uninterruptible Power Supply(UPS) LED Package Marking and Ordering Information Product ID Pack Marking AP4N65D TO-252-3L AP4N65D XXX YYYY AP4N65Y TO-251S-3L AP4N65Y XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise
