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AP4N65Y, AP4N65D Datasheet - APM

AP4N65Y 650V N-Channel Enhancement Mode MOSFET

The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

AP4N65Y Features

* VDS = 650V ID =4A RDS(ON) < 2.4Ω @ VGS=10V （Type：2.0Ω） Application Uninterruptible Power Supply(UPS) LED Package Marking and Ordering Information Product ID Pack Marking AP4N65D TO-252-3L AP4N65D XXX YYYY AP4N65Y TO-251S-3L AP4N65Y XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise

AP4N65D-APM.pdf

This datasheet PDF includes multiple part numbers: AP4N65Y, AP4N65D. Please refer to the document for exact specifications by model.
AP4N65Y Datasheet Preview Page 2 AP4N65Y Datasheet Preview Page 3

Datasheet Details

Part number:

AP4N65Y, AP4N65D

Manufacturer:

APM

File Size:

2.10 MB

Description:

650v n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AP4N65Y, AP4N65D.
Please refer to the document for exact specifications by model.

AP4N65Y Distributor

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TAGS

AP4N65Y AP4N65D 650V N-Channel Enhancement Mode MOSFET APM