AP4N90D
APM
1.53MB
900v n-channel enhancement mode mosfet. The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction
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AP4N90Y - 900V N-Channel Enhancement Mode MOSFET
(APM)
AP4N90DIY
900V N-Channel Enhancement Mode MOSFET
Description The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl.
AP4N10MSI - 100V N-Channel Enhancement Mode MOSFET
(APM)
Description
AP4N10MSI
100V N-Channel Enhancement Mode MOSFET
The AP4N10MSI uses advanced trench technology to provide excellent RDS(ON), low gate ch.
AP4N25MI - 250V N-Channel Enhancement Mode MOSFET
(APM)
Description
AP4N25MI
250V N-Channel Enhancement Mode MOSFET
The AP4N25MI uses advanced trench technology to provide excellent RDS(ON), low gate char.
AP4N65D - 650V N-Channel Enhancement Mode MOSFET
(APM)
AP4N65DIY
650V N-Channel Enhancement Mode MOSFET
Description The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl.
AP4N65Y - 650V N-Channel Enhancement Mode MOSFET
(APM)
AP4N65DIY
650V N-Channel Enhancement Mode MOSFET
Description The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl.
AP4N80F - 800V N-Plance Enhancement Mode MOSFET
(APM)
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(APM)
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AP4 - Acorn Pentode
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AP400-B10 - AC Current transducer AP-B10
(LEM)
AC Current transducer AP-B10
Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (H.
AP400-B420L - AC Current transducer AP-B420L
(LEM)
AC Current transducer AP-B420L
Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary .