AP4N90Y - 900V N-Channel Enhancement Mode MOSFET
The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and high
AP4N90Y Features
* VDS = 900V ID =4.0A RDS(ON) < 3500mΩ @ VGS=10V （Type：3000mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP4N90D TO-252-3L AP4N90D XXX YYYY AP4N90Y TO-251S-3L AP4N90Y XXX YYYY Absolute Maximum
