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AP4N90Y, AP4N90D Datasheet - APM

AP4N90Y 900V N-Channel Enhancement Mode MOSFET

The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

AP4N90Y Features

* VDS = 900V ID =4.0A RDS(ON) < 3500mΩ @ VGS=10V （Type：3000mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP4N90D TO-252-3L AP4N90D XXX YYYY AP4N90Y TO-251S-3L AP4N90Y XXX YYYY Absolute Maximum

AP4N90D-APM.pdf

This datasheet PDF includes multiple part numbers: AP4N90Y, AP4N90D. Please refer to the document for exact specifications by model.
AP4N90Y Datasheet Preview Page 2 AP4N90Y Datasheet Preview Page 3

Datasheet Details

Part number:

AP4N90Y, AP4N90D

Manufacturer:

APM

File Size:

1.53 MB

Description:

900v n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AP4N90Y, AP4N90D.
Please refer to the document for exact specifications by model.

AP4N90Y Distributor

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TAGS

AP4N90Y AP4N90D 900V N-Channel Enhancement Mode MOSFET APM