AP5N10MI-L - 100V N-Channel Enhancement Mode MOSFET
AP5N10MI-L 100V N-Channel Enhancement Mode MOSFET The AP5N10MI-L uses advanced Trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Fe
AP5N10MI-L Features
* VDS = 100V ID =5A RDS(ON) < 140mΩ @ VGS=10V (Type：115mΩ) Application Automative lighting Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP5N10MI-L SOT23-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS D
