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AP5N10MI-L Datasheet - APM

AP5N10MI-L - 100V N-Channel Enhancement Mode MOSFET

AP5N10MI-L 100V N-Channel Enhancement Mode MOSFET The AP5N10MI-L uses advanced Trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General Fe

AP5N10MI-L Features

* VDS = 100V ID =5A RDS(ON) < 140mΩ @ VGS=10V (Type:115mΩ) Application Automative lighting Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP5N10MI-L SOT23-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS D

AP5N10MI-L-APM.pdf

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Datasheet Details

Part number:

AP5N10MI-L

Manufacturer:

APM

File Size:

590.32 KB

Description:

100v n-channel enhancement mode mosfet.

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